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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제1호
- 발행연도
- 2020.1
- 수록면
- 83 - 90 (8page)
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This paper deals with design and simulation of RF MEMS Shunt type switch having non-uniform meanders. The device is optimized and done various electromechanical and RF performance analysis in the COMSOL multiphysics and HFSS tools. By varying the thickness of beam, gap and changing the beam materials such as Gold, Copper, Nickel, we done simulation and calculation of spring constant, pull-in voltage, capacitance analysis of the proposed switch. Out of all these different materials, Gold is best by its material properties. The pull-in voltage of proposed switch is 16.9 V, the switch have fast switching time i.e. 1.2 μs. The capacitance analysis like Up state and down state capacitance of the proposed switch is 7.46 fF and1.25 pF. The RF-Performance of the proposed switch exhibits at low frequencies (2–12 GHz). The return and insertion loss are carried out by proposed switch is − 41.55 dB, − 0.0865 dB respectively. The switch having good isolation is − 47.70 dB at 5 GHz. The proposed shunt type switch is used for low frequencies such as microphones, radar and satellite applications.
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참고문헌 (15)
참고문헌 신청
S. Molaei / 2017 / Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation / Microsyst. Technol 23:1907~1912
H. -C. Lee / 2005 / Piezo electrically actuated RF MEMS DC contact switches with low voltage operation / IEEE Microw. Wirel. Compon. Lett 15:202~204
G. P. Rehder / 2010 / Low frequency test for RF MEMS switches / IEEE 1:350~354
M. Angira / 2015 / Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RFMEMS switch / Microsyst. Technol. 21:1173~1178
J. Y. Park / 2001 / Monolithically integrated micromachined RF MEMS capacitive switches / Sens. Actuators A 89:88~94
H. -C. Lee / 2005 / Piezo electrically actuated RF MEMS DC contact switches with low voltage operation / IEEE Microw. Wirel. Compon. Lett 15:202~204
G. P. Rehder / 2010 / Low frequency test for RF MEMS switches / IEEE 1:350~354
M. Angira / 2015 / Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RFMEMS switch / Microsyst. Technol. 21:1173~1178
J. Y. Park / 2001 / Monolithically integrated micromachined RF MEMS capacitive switches / Sens. Actuators A 89:88~94
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