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논문 기본 정보

자료유형
학술저널
저자정보
황진영 (청주대학교) 이상렬 (청주대학교)
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제19권 제1호
발행연도
2018.2
수록면
15 - 20 (6page)
DOI
https://doi.org/10.1007/s42341-018-0011-2

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Silicon?zinc?tin?oxide (SZTO) thin film transistors (TFTs) were fabricated by radio frequency magnetron sputtering atroom temperature, and the influence of annealing temperature (400?600 C) on the electrical properties and the stability ofthe SZTO TFTs were investigated. As the annealing temperature was increased, the electrical properties, such as the fieldeffect mobility, on/off current ratio, and subthreshold swing enhanced because of increase in the carrier concentration anddecrease in the trap density. However, a conductor-like behavior was observed at 600 C owing to a high carrier concentration. The stability of the SZTO TFTs was measured in the temperature range of 300?333 K under temperature stress(TS). The DVTH was measured to be 5.5, and 2.81 V at annealing temperatures of 400 and 500 C, respectively. Theseresults indicate that defect states decreased and stability enhanced with increase in the annealing temperature because ofrearrangement of atoms caused by annealing. The relation between the electrical properties and the annealing temperaturewas also investigated using the transmission line method, and the total resistance was found to decrease with increase in theannealing temperature, which is in accordance with the result of TS.

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