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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.9
- 수록면
- 406 - 413 (8page)
- DOI
- https://doi.org/10.1007/s13391-021-00301-z
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초록· 키워드
오류제보하기
Ferroelectric random access memory cell (FeRAM) consists of one selection transistor with high switching performanceand one memory transistor with large hysteresis. The simple fabrication method for the selection transistor with high mobilityand the memory transistor with large hysteresis within one cell has been a challenge and not adequately explored. Wedemonstrated the selective etching of dielectric polymer buffer layer for the organic ferroelectric memory cell. The dielectricbuffer layer of polymethylmethacrylate (PMMA) is formed on the ferroelectric gate insulator of poly(vinylidenefluoride-cotrifluoroethylene)[P(VDF-TrFE)] to enhance mobility of selection transistors. The UV ozone was partially treated on thePMMA/P(VDF-TrFE) bilayer which enables the top PMMA layer to be selectively etched due to the large process marginbecause the UV ozone etch rate of PMMA to P(VDF-TrFE) is more than 50 times. While the selection transistor with thePMMA buffer layer shows an enhanced mobility of 0.2 cm2V?1 s?1, the memory transistor undergoing UV ozone etchingprocess with post-annealing exhibits conventional ferroelectric memory properties such as large hysteresis and good memoryretention characteristics. In our ferroelectric memory cell, the memory transistor is electrically isolated completely fromthe high negative bias in the bit-line during switching-off of the selection transistor. Our polymer selective etching for aferroelectric memory cell is a useful technique in developing nonvolatile polymer FeRAM.
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참고문헌 (12)
참고문헌 신청
Brown, A. R. / 1997 / Fieldeff ect transistors made from solution-processed organic semiconductors / Synth. Met 88(1):37~55
Naber, R. C. G. / 2005 / High-performance solution-processed polymer ferroelectric fi eldeffect transistors / Nat. Mater 4(3):243~248
Kim, J. -H. / 2015 / Leakage current behavior in MIM capacitors and MISM organic capacitors with a thin AlOx insulator / Electron. Mater. Lett 11(2):241~245
De Brito, B. C. / 2008 / Ultralow power microfuses for write-once read-many organic memory elements / Adv. Mater 20(19):3750~3753
Won-Yong Lee / 2014 / Formation of Solution-Processed Multistacked Ferroelectric Layers for Performance Improvement of Ferroelectric-Gated Pentacene Field-Effect Transistors / Electronic Materials Letters 10(4):763~766
Naber, R. C. G. / 2005 / High-performance solution-processed polymer ferroelectric fi eldeffect transistors / Nat. Mater 4(3):243~248
Kim, J. -H. / 2015 / Leakage current behavior in MIM capacitors and MISM organic capacitors with a thin AlOx insulator / Electron. Mater. Lett 11(2):241~245
De Brito, B. C. / 2008 / Ultralow power microfuses for write-once read-many organic memory elements / Adv. Mater 20(19):3750~3753
Won-Yong Lee / 2014 / Formation of Solution-Processed Multistacked Ferroelectric Layers for Performance Improvement of Ferroelectric-Gated Pentacene Field-Effect Transistors / Electronic Materials Letters 10(4):763~766
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